Figure 8: 𝐼 𝑑 - 𝑉 𝑔 characteristics of HTOT SOI MOSFET with 2-nm-thick and 10-nm-long local-thin Si regions at 𝑉 𝑑 = 0 . 1  V for various temperature conditions; Lp = 20 nm and Lg = 60 nm. It is assumed that the ground-state level of the conduction band of the local-thin Si region is higher by 0.1 eV than the conduction band bottom.