Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Table 1

Values measured and predicted with the new model.

Measured values at 29.3°C	Predicted values at 39.3°C	Measured values at 39.3°C
𝑉BEmax=0.558 V	𝑉BEmax=0.5346 V	𝑉BEmax=0.532 V
Cemax=84 pF	Cemax=81.54 pF	Cemax=75.2 pF
𝑉DE=0.610 V	𝑉DE=0.5885 V	𝑉DE=0.586 V
𝐶𝑆=4.259×10^−8 pF	𝐶𝑆=19.47×10^−8 pF	𝐶𝑆=19.7×10^−8 pF