Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Table 2

Calculated values of Δ𝑉_𝐵𝐸 and its equivalent temperature error.

Data at 𝑇𝑟=300 K and 𝑇=240 K						Results
Technology	𝑉BE(𝑇𝑟)𝑉	𝑛(𝑇𝑟)	𝑛(𝑇)	𝑉^𝐺0 V	𝜂^	Δ𝑉BE(𝑇) mV	ΔTeq°C
NPN (Bipolar)	0.46	1.07496	1.07764	1.12046	5.1	1.711	0.855
	0.50	1.12459	1.15790	1.12046	5.1	10.40	5.2
PNP (CMOS)	0.46	1.07472	1.07003	1.18500	3.54	−1.606	0.803
	0.50	1.12344	1.12837	1.18500	3.54	1.756	0.878