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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 359580, 7 pages
http://dx.doi.org/10.1155/2012/359580
Research Article

Comparative Study of , , and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758, USA
2SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, USA
3School of Integrated Technology, College of Engineering, Yonsei University, 162-1 Songdo-dong, Incheon 406-840, Republic of Korea
4Department of Chemistry and Biochemistry, Texas State University, 601 University Drive, San Marcos, TX 78666, USA
5Department of Chemistry, UT, Austin, TX 78712, USA

Received 19 March 2012; Accepted 12 September 2012

Academic Editor: Edward Yi Chang

Copyright © 2012 J. H. Yum et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.