GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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			<g transform="matrix(.022,-0,0,-.022,114.5,15.975)"><use xlink:href="#x53"/></g>

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</svg> + UV Interface Treatment Technology

<table>Power performances of three devices under 2.4 GHz and <svg height="15.4" id="M122" style="vertical-align:-3.39069pt" version="1.1" viewbox="0 0 23.975 15.4" width="23.975" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> of 8 V operation.</table>

Active and Passive Electronic Components

fig14

Figure 14

Figure 14: GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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</svg> + UV Interface Treatment Technology 

Figure 14 | GaN-Based High-k Praseodymium Oxide Gate MISFETs with 
	
		
			

			

			

			

			

			

			

			

			

			

		
	
 + UV Interface Treatment Technology 

Active and Passive Electronic Components

GaN-Based High-k Praseodymium Oxide Gate MISFETs with + UV Interface Treatment Technology

Figure 14