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Active and Passive Electronic Components
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Active and Passive Electronic Components
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2012
/
Article
/
Fig 4
/
Research Article
GaN-Based High-
k
Praseodymium Oxide Gate MISFETs with
+ UV Interface Treatment Technology
Figure 4
(a) 3
d
core-level XPS spectra of Pr
2
O
3
versus temperatures. (b) TEM cross-sectional photograph of Pr
2
O
3
MIS-HEMT.
(a)
(b)