Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="565827.fig.002a" src="https://static.hindawi.com/articles/apec/volume-2012/565827/figures/565827.fig.002a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>SELBOX structure</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="565827.fig.002b" src="https://static.hindawi.com/articles/apec/volume-2012/565827/figures/565827.fig.002b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Back oxide gap parameters, (<svg height="14.4125" id="M5" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 24.1875 14.4125" width="24.1875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,0,0,-.017,.062,10.125)"><path d="M324 430l-26 -36l-112 -4l-55 -265q-13 -66 7 -66q13 0 44.5 20t50.5 40l17 -24q-38 -40 -85.5 -73.5t-87.5 -33.5q-50 0 -21 138l55 262h-80l-2 8l25 34h66l25 99l78 63l10 -9l-37 -153h128z" id="x1D461"></path></g>
<g transform="matrix(.012,0,0,-.012,5.863,14.2)"><path d="M152 404l81 35q23 10 41 10q81 0 139 -61.5t58 -149.5q0 -107 -74.5 -178.5t-176.5 -71.5q-71 0 -147 36v555q0 48 -9.5 59.5t-56.5 15.5v23q79 10 145 35v-308zM152 374v-258q0 -20 6 -35q7 -19 30 -37t58 -18q63 0 99.5 50t36.5 137q0 82 -43.5 131t-108.5 49
q-44 0 -78 -19z" id="x62"></path></g><g transform="matrix(.012,0,0,-.012,12.002,14.2)"><path d="M257 449q92 0 154 -65t62 -158q0 -112 -67 -175t-150 -63q-98 0 -158.5 66.5t-60.5 154.5q0 59 21 106.5t54.5 75.5t71 43t73.5 15zM244 416q-48 0 -81 -47t-33 -128q0 -96 38 -158t99 -62q51 0 82 43.5t31 139.5q0 91 -36 151.5t-100 60.5z" id="x6F"></path></g><g transform="matrix(.012,0,0,-.012,17.892,14.2)"><path d="M474 0h-214v26q32 4 39 12t-5 28l-74 117q-39 -58 -64 -106q-16 -25 -10 -35t44 -16v-26h-186v26q46 6 64 17t48 49t85 120l-87 136q-23 36 -40 47t-58 16v26h199v-26q-31 -4 -36.5 -12.5t9.5 -29.5l59 -93q37 56 58 94q13 23 7 30t-40 11v26h183v-26q-47 -5 -65 -13.5
t-45 -39.5q-24 -29 -78 -110l97 -148q28 -43 46.5 -55.5t63.5 -18.5v-26z" id="x78"></path></g>
</svg>): SELBOX Thickness, (<svg height="14.875" id="M6" style="vertical-align:-5.73163pt" version="1.1" viewbox="0 0 33.849998 14.875" width="33.849998" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,0,0,-.017,.062,7.675)"><path d="M689 332q0 -81 -40 -161.5t-103.5 -131.5t-127.5 -51q-32 0 -58.5 16t-40.5 46q-70 -62 -139 -62q-45 0 -77.5 30t-32.5 86q0 8 7 52q11 77 45 187q6 19 6 34q0 6 -7 6q-24 0 -78 -64l-20 23q32 48 73 77t78 29q32 0 32 -43q0 -30 -12 -73q-27 -95 -38 -152
q-8 -44 -8 -58q0 -77 68 -77q31 0 60 33.5t39 77.5l62 260l75 16l5 -6l-63 -246q-8 -29 -8 -58q0 -77 68 -77q66 0 116 75.5t50 194.5q0 43 -12 57q-11 12 -11 24q0 19 15 35.5t34 16.5q18 0 30.5 -34.5t12.5 -81.5z" id="x1D464"></path></g>
<g transform="matrix(.012,0,0,-.012,12.163,11.763)"><path d="M463 437l5 -8q-21 -38 -45 -51l-57 3q30 -35 30 -88q0 -76 -52.5 -118t-122.5 -42q-24 0 -51 5q-30 -21 -30 -42q0 -16 16 -27t47 -11q19 0 54 0.5t52 0.5q36 0 65.5 -8t53.5 -36t24 -74q0 -77 -75 -137.5t-174 -60.5q-79 0 -126 37.5t-48 84.5q0 32 24 56q21 21 83 70
q-49 15 -74 55q-13 20 -11 42q56 21 88 61q-37 16 -62.5 51t-25.5 83q0 78 56.5 122t122.5 44h1q51 0 96 -27q71 4 136 15zM219 418q-34 0 -58 -32t-24 -87q0 -59 26.5 -96.5t67.5 -37.5q35 1 59 32t24 87q0 59 -26 96.5t-69 37.5zM241 -11q-62 0 -87 -21q-46 -39 -46 -78
q0 -41 38 -68.5t94 -27.5q69 0 106.5 31t37.5 80q0 52 -45 71q-33 13 -98 13z" id="x67"></path></g><g transform="matrix(.012,0,0,-.012,17.731,11.763)"><path d="M433 39l-85 -51q-27 0 -47 20q-16 16 -24 44q-5 -3 -24 -16.5t-27 -18.5t-23 -13.5t-25 -12t-19 -3.5q-52 0 -86 36.5t-34 85.5q0 71 81 99q128 43 155 65v17q0 54 -23 83.5t-62 29.5q-28 0 -45 -19t-29 -66q-7 -23 -29 -23q-15 0 -29 13t-14 30t31 40q25 19 68.5 40.5
t81.5 29.5q49 0 82 -27q45 -39 45 -123v-185q0 -60 35 -60q18 0 36 11zM275 84v156q-12 -6 -49 -23t-41 -19q-31 -14 -46 -31t-15 -43q0 -35 22.5 -55.5t48.5 -20.5q19 0 42 10.5t38 25.5z" id="x61"></path></g><g transform="matrix(.012,0,0,-.012,22.955,11.763)"><path d="M169 380l92 53q26 16 49 16q80 0 128.5 -56t48.5 -133q0 -108 -72.5 -180.5t-176.5 -91.5q-38 1 -69 18v-131q0 -57 13 -70t71 -18v-27h-236v27q49 5 61 17t12 61v452q0 48 -9.5 58.5t-56.5 16.5v24q66 11 145 43v-79zM169 346v-270q37 -39 94 -39q63 0 101.5 50
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</svg>): Gap length</td></tr></table></td></tr></table>

Active and Passive Electronic Components

fig2

Figure 2

Figure 2: Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure 