Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

<table>DHBT model <svg height="8.1499996" id="M15" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 10.175 8.1499996" width="10.175" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,0,0,-.017,.062,7.888)"><path d="M574 449q-23 -58 -38 -79q-16 -4 -79 -4q-27 -100 -46 -219q-14 -87 7 -87t74 36l13 -27q-74 -81 -139 -81q-48 0 -48 62q0 22 8 59l60 258l-154 4q-21 -103 -54.5 -209t-64.5 -151q-38 -23 -83 -23l-7 15q46 36 94 152.5t64 216.5q-81 0 -138 -54l-18 23q22 27 39.5 43
t61.5 33.5t100 17.5q43 0 131.5 -2.5t129.5 -2.5q23 0 33.5 5t24.5 25z" id="x1D70B"></path></g>
</svg>-topology with a two-pole RC thermal subcircuit.</table>

Active and Passive Electronic Components

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Figure 1

Figure 1: Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator 