Active and Passive Electronic Components / 2012 / Article / Fig 1

Research Article

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Figure 1

Schematic cross-section of a basic AlGaN/GaN HFET structure, showing the physical parameters of the NCSU HFET model. Four describe layout: . Four describe the barrier layer, . Seven describe the GaN buffer, for the GaN itself, three for electron transport in the GaN , and two for its interface with AlGaN, . The gate metal is characterized by its electron affinity, .

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