Active and Passive Electronic Components / 2012 / Article / Fig 2

Research Article

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Figure 2

Cross-section of HFET model (a) triode operation with its four physical zones and the voltages at the boundaries between them. (b) Saturated operation with its 5 physical zones. Except for Z4, the dotted line indicates the electron path in the 2DEG just below the AlGaN/GaN interface. In Z4, the 2DEG is disrupted and the electrons disperse away from the interface to form a net space charge in the GaN, as discussed in the text.
806253.fig.002a
(a)
806253.fig.002b
(b)

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