Active and Passive Electronic Components / 2012 / Article / Fig 5

Research Article

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Figure 5

Current-voltage characteristics simulated by MWO for the HFET model (blue lines), along with experimental measurements (red lines) for an HFET with 0.8 μm gate length and 400 μm width. Each of the six curves corresponds to an integer value from −4 V to 1 V. All curves sweep from 0 V to 20 V.

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