Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

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</svg> as a function of the conductance current with different beta. The values of beta are 2, 1.5, and 1.2, respectively. The length of the source access region is 1.2 <i>μ</i>m.</table>

Active and Passive Electronic Components

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Figure 6