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Active and Passive Electronic Components
Volume 2012, Article ID 834961, 7 pages
Research Article

Design and Fabrication of a Novel T-Shaped Piezoelectric ZnO Cantilever Sensor

Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China

Received 5 March 2012; Revised 12 May 2012; Accepted 15 May 2012

Academic Editor: Ching Liang Dai

Copyright © 2012 Kai Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A novel T-shaped piezoelectric ZnO cantilever sensor for chem/bio-detection is designed and fabricated with MEMS technology. By using Rayleigh-Ritz method, the fundamental resonant frequency formula of T-shaped cantilevers is deduced for the first time and is validated by simulation results and experimental results. From this formula, we can easily find the superiority of adopting T-shape for the cantilevers. The complete process of the cantilever sensor is then successfully developed. The cantilever sensor is actuated by a layer of high-quality ZnO film with preferred (002) orientation, which is evaluated by SEM and XRD. The key step of the process is protecting the ZnO film from KOH etching by a novel and effective method, which has rarely appeared in the literature. Finally, this cantilever sensor is measured by a network analyzer, and it has a fundamental resonant frequency of 24.60 kHz. The cantilever sensor developed in this study illustrates the feasibility and potential for many miniaturized sensor applications.