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Active and Passive Electronic Components
Volume 2012, Article ID 872494, 4 pages
Research Article

The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions

1Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan
2Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 824, Taiwan

Received 9 March 2012; Revised 23 April 2012; Accepted 26 April 2012

Academic Editor: Kuan-Wei Lee

Copyright © 2012 Yi-Lin Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA. Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness. The threshold voltages of the devices changed with various PMA conditions. The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments.