Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics
Figure 5
Characteristics of - for pentacene-based TFTs deposited on the PVP-TiO2 nanocomposite gate dielectric insulator with TiO2 contents: 3 wt% (color line). For the device, the drain voltage () was swept from 0 to −50 V, and the gate voltage () was fixed at 0, −10, −20, −30, −40, and −50 V for each sweep.
