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Active and Passive Electronic Components
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Special Issues
Active and Passive Electronic Components
/
2013
/
Article
/
Tab 3
/
Research Article
Noise Performance of Heterojunction DDR MITATT Devices Based on
at W-Band
Table 3
Millimeter-wave and noise properties.
Parameters
NSPS
NSpSG1
NSpSG2
nSGPS1
nSGPS2
(×10
8
A m
−2
)
2.8
3.0
3.2
3.3
3.6
(×10
7
V m
−1
)
6.0125
3.6760
3.5666
3.5534
3.3656
(V)
23.89
12.89
11.81
11.40
11.08
(V)
16.34
6.67
6.06
4.37
4.07
(
μ
m)
0.354
0.210
0.204
0.166
0.162
/
(%)
45.39
31.82
31.86
25.94
24.55
(%)
10.06
15.36
15.49
19.64
20.15
(GHz)
106
94
96
95
94
(×10
7
S m
−2
)
4.6593
8.3760
10.594
10.441
11.790
(×10
7
S m
−2
)
17.320
12.252
9.0710
12.102
4.2031
(= −
/
)
3.72
1.46
0.86
1.16
0.36
(×10
−9
Ω m
2
)
1.4484
3.8026
5.4463
4.0869
7.5254
(mW)
647.44
571.47
563.22
710.86
773.29
/
(×10
−16
V
2
sec)
39.51
3.75
1.85
1.39
0.82
NM (dB)
40.00
37.42
36.54
34.27
33.09