Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="839198.fig.001a" src="https://static.hindawi.com/articles/apec/volume-2013/839198/figures/839198.fig.001a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Set operation</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="839198.fig.001b" src="https://static.hindawi.com/articles/apec/volume-2013/839198/figures/839198.fig.001b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Reset operation</td></tr></table></td></tr></table>

<table>Current flow of the set and reset operations of ReRAM (bipolar switching device).</table>

Active and Passive Electronic Components

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Figure 1

Figure 1: Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device 