Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device

<table>Simulation results for store operation. <svg height="15.4" id="M121" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 29.762501 15.4" width="29.762501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> and <svg height="15.4" id="M122" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 30.575001 15.4" width="30.575001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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t-115.5 -72q40 -86 66 -133q39 -68 65 -101q28 -37 73 -51zM491 483q0 67 -33.5 101t-91.5 34q-35 0 -51 -10q-13 -8 -20 -48l-45 -245h49q71 0 113 28q79 52 79 140z" id="x1D445"></path></g>
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</svg> were fixed at 100 and 65 kΩ. In this case, the information “01” was stored in <svg height="15.4" id="M123" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 21.0875 15.4" width="21.0875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>.</table>

Active and Passive Electronic Components

fig10

Figure 10

Figure 10: Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device 

Figure 10 | Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device 