A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 <i>μ</i>m CMOS Technology

<table>Simulation and measurement results of conversion gain versus frequency of the proposed LNA. RF stands for simulation results of modified MOSFET RF model. FF, TT, and SS represent the simulation results of fast-NMOS fast-PMOS, typical-NMOS typical-PMOS, and slow-NMOS slow-PMOS process corners.</table>

Active and Passive Electronic Components

fig19

Figure 19

Figure 19: A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 <i>μ</i>m CMOS Technology 

Active and Passive Electronic Components

A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology

Figure 19