A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology

Table 2

Recently reported performance of UWB LNAs.

Reference	Process CMOS (μm)	𝑆11 (dB)	Avg. gain (db)	Freq. (GHz)	NF (dB)	IIP3 (dBm)	Die area (mm^2)	Power (mW)	Topology
[4]	0.18 μm CMOS	<−7.8	11.9	2−6.5	4.1−4.6	4 (4 GHz)	0.88	27	Feedback
[7]	0.6 μm CMOS	<−7	6.1	0.5−5.5	5.4−8.2	N/A	1.12	83.4	Distributed
[8]	0.18 μm CMOS	<−20	10	0−11	3.1−6.1	N/A	1.44	19.6	Distributed
[9]	0.18 μm CMOS	<−12	14	3−6	4.7−6.7	−5 (4.5 GHz)	1.1	59.4	Distributed
[10]	0.18 μm CMOS	<−9	9.8	2–4.6	2.3−5	−7 (4 GHz)	0.9	12.6*	Feedback
[11]	0.18 μm CMOS	<−9.9	9.3	2.4−9.5	4−9	−6.7 (6 GHz)	1.1	9*	Chebyshev filter
[12]	0.18 μm CMOS	<−10	8.6	2.4−9.4	4.1−10	−3.5 (6 GHz)	1.76	7.1*	Chebyshev filter
[13]	0.18 μm CMOS	<−5	19.1	2.8−7.2	3.2−3.8	−1 (6 GHz)	1.63	32	Feedback network synthesis
[14]	0.18 μm CMOS	<−10	17	2–11	3.8	N/A	0.635	10.56**	Feedback
[15]	0.15 μm HEMT	N/A	18	0.85–13.35	2.5	N/A	1.162	70**	Feedback
This work	0.18 μm CMOS	<−9	9	3–5.6	4.6–5.3	2 (5.3 GHz)	0.8	9	Proposed

∗Only core LNA, **Simulation.