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Active and Passive Electronic Components
Volume 2014, Article ID 524107, 7 pages
Research Article

Signal Integrity Analysis in Carbon Nanotube Based Through-Silicon Via

Microelectronics and VLSI Group, Deptartment of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India

Received 18 October 2013; Revised 15 December 2013; Accepted 16 January 2014; Published 2 March 2014

Academic Editor: Ashok Goel

Copyright © 2014 Manoj Kumar Majumder et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Development of a reliable 3D integrated system is largely dependent on the choice of filler materials used in through-silicon vias (TSVs). This research paper presents carbon nanotube (CNT) bundles as prospective filler materials for TSVs and provides an analysis of signal integrity for different single- (SWCNT), double- (DWCNT), and multi-walled CNT (MWCNT) bundle based TSVs. Depending on the physical configuration of a pair of TSVs, an equivalent electrical model is employed to analyze the in-phase and out-phase delays. It is observed that, using an MWCNT bundle (with number of shells = 10), the overall in-phase delays are reduced by 96.86%, 92.33%, 78.35%, and 32.72% compared to the bundled SWCNT, DWCNT, 4-shell MWCNT, and 8-shell MWCNT, respectively; similarly, the overall reduction in out-phase delay is 85.89%, 73.38%, 45.92%, and 12.56%, respectively.