Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs
Figure 2
- characteristics measured above the threshold domain (linear domain) for UTB ( = 46 nm) and GRC ( = 2.2 nm), for two low values (0.05 V and 0.1 V): (a): UTB, W/L = 80 μm/8 μm and = 300 K. (b): UTB, W/L = 80 μm/8 μm and = 77 K. (c): GRC, W/L = 80 μm/8 μm and = 300 K. (d): GRC, W/L = 80 μm/8 μm and = 77 K.
