Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions

Figure 3

output characteristics measured for UTB ( = 46 nm) and GRC ( = 2.2 nm), for five values (0 V, 1 V, 2 V, 3 V, and 4 V) and at two temperatures: (a) UTB at = 300 K, (b) UTB at = 77 K, (c) GRC at = 300 K, and (d) GRC at = 77 K.

(a)  

(b)

(c)

(d)