Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions

Figure 4

characteristics measured in the saturation domain and corresponding -functions ( and ) for UTB ( = 46 nm) and GRC ( = 2.2 nm) taken at = 3 V and = 7 V, respectively: (a) UTB, = 80 μm/8 μm, = 300 K. (b) UTB, = 80 μm/8 μm, = 77 K. (c) GRC, = 80 μm/8 μm, = 300 K. (d) GRC, = 80 μm/8 μm, = 77 K.

(a)  

(b)

(c)

(d)