Research Article
Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions
Figure 6
Parallel mode characteristics for GRC with 2.2 nm channel film thickness. The device has the same gate = 80 × 8 m2 = 6.4 × 10−6 cm2. The capacitance was measured at 100 kHz. Drain and source are shorted.