Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions

Table 1

Summarizing table of the threshold voltage , the slope extracted from the versus function, the subsequent parameter, and saturation mobility for UTB device at 300 K and 77 K.  = 3 V (saturation domain).

Temperature [K]	300	77	Shift or ratio 300 K/77 K
[V]	−0.89	−0.40	−0.51
= slope versus [metric units]	0.0563	0.0774	0.73
[mS/V] from (12)	1.064	2.775	0.38
[cm^2/Vs] from (11)	880	2300	0.38