Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions

Table 2

Summarizing table of the extracted parameters for GRC’s having ratio of 80 μm/8 μm at = 7 V (saturation) for both 300 K and 77 K. Threshold voltage is extracted from the function while the factor is extracted from the function. The parameter and the subsequent saturation mobility are extracted from the function slope. Extracted series resistance is appended accordingly.

Temperature [K]	300	77	Shift or ratio 300 K/77 K
[V] from (10)	−0.55	−0.24	+0.31
[V^−1] from (14)	7.87	2.65	3
[μS/V] from (12)	3.84	0.15	26
[cm^2/Vs] for GRC from (11)	2.78	0.11	26
[cm^2/Vs] for UTB (given as reference)	880	2300	0.38
[MΩ] from (15)	2.05	17.4	0.12