Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions

Table 3

Comparative table of the threshold voltage , parameter, and mobility extracted from saturation and linear method [4] at 300 K and 77 K, respectively, for UTB device ( = 80 μm/8 μm).

Extraction domain	Saturation			Linear
Temperature [K]	300 K	77	Shift or ratio 300 K/77 K	300	77	Shift or ratio 300 K/77 K
[V]	−0.89	−0.40	−0.51	−0.65	+0.26	−0.91
[mS/V]	1.064	2.775	0.38	1.47	2.41	0.61
[cm^2/Vs]	880	2300	0.38	1210	2000	0.61