Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions

Table 4

Comparative table of threshold voltage , , and mobility extracted from saturation and linear domain [4] at 300 K and 77 K, respectively, for GRC device ( = 80 μm/8 μm).

Extraction domain	Saturation			Linear
Temperature [K]	300	77	Shift or ratio 300 K/77 K	300	77	Shift or ratio 300 K/77 K
[V]	−0.55	−0.24	−0.31	−2.35	−2.60	+0.25
[μS/V]	3.84	0.15	26	0.31	0.007	44
[cm^2/Vs]	2.78	0.11	26	0.222	0.005	44
[MΩ]	2.05	17.4	0.12	1.73	8.93	0.19