Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

<div>The effective electron mobility versus <svg height="11.7619pt" id="M46" style="vertical-align:-3.16516pt" version="1.1" viewbox="-0.0498162 -8.59674 46.8377 11.7619" width="46.8377pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.449,3.001)"><path d="M700 305H441V272C542 264 548 258 548 186V107C548 64 536 53 516 42C493 30 462 24 429 24C237 24 151 189 151 333C151 517 264 626 415 626C507 626 585 594 609 470L642 476C634 544 629 601 626 636C594 644 513 665 429 665C234 665 46 554 46 321C46 123 194 -15 415 -15C495 -15 578 7 642 22C635 50 635 81 635 116V201C635 259 639 264 700 272V305Z" id="g58-69"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="725" vert-adv-y="725"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,14.046,3.001)"><path d="M416 501L399 642C356 655 314 665 271 665C140 665 63 582 63 486C63 372 163 325 229 290C304 250 359 217 359 142C359 70 316 25 240 25C138 25 94 125 78 186L44 178C52 123 64 45 72 21C81 16 96 8 121 0S179 -15 220 -15C353 -15 445 68 445 176C445 289 350 335 270 375C191 414 143 449 143 520C143 572 177 627 253 627C340 627 366 556 382 495L416 501Z" id="g58-81"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="484" vert-adv-y="484"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,21.93,0)"><path d="M556 236V289H56V236H556Z" id="g54-33"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="611" vert-adv-y="611"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,32.814,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,40.263,3.001)"><path d="M655 676H628C608 656 600 650 571 650H156C118 650 114 651 102 676H77C63 615 45 548 24 485L60 486C81 531 97 562 114 580C134 603 148 611 252 611H308L217 127C201 41 196 38 105 32L98 0H384L393 32C300 38 288 41 304 127L393 611H466C553 611 571 604 582 580C592 559 597 530 595 485L630 489C636 548 645 624 655 676Z" id="g50-85"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="673" vert-adv-y="673"></glyph.data></g></svg> relationship (semilog) extracted from the simulated transfer characteristics using the default beta model for UTB and NSB devices. For comparison the electron mobility extracted from the measurement for NSB device. <svg height="11.7619pt" id="M47" style="vertical-align:-3.16516pt" version="1.1" viewbox="-0.0498162 -8.59674 19.2914 11.7619" width="19.2914pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.449,3.001)"><path d="M43 650V617C122 612 130 606 130 522V128C130 44 122 37 34 32V0H275C400 0 497 25 573 82C652 142 698 229 698 350C698 445 662 518 613 565C549 625 456 650 327 650H43ZM217 544C217 580 220 591 229 599C240 607 264 613 311 613C380 613 437 599 482 570C561 523 598 436 598 336C598 177 511 40 324 40C248 40 217 61 217 135V544Z" id="g58-66"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="744" vert-adv-y="744"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,14.219,3.001)"><path d="M416 501L399 642C356 655 314 665 271 665C140 665 63 582 63 486C63 372 163 325 229 290C304 250 359 217 359 142C359 70 316 25 240 25C138 25 94 125 78 186L44 178C52 123 64 45 72 21C81 16 96 8 121 0S179 -15 220 -15C353 -15 445 68 445 176C445 289 350 335 270 375C191 414 143 449 143 520C143 572 177 627 253 627C340 627 366 556 382 495L416 501Z" id="g58-81"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="484" vert-adv-y="484"></glyph.data></g></svg> is fixed to 0.1 V.</div>

Active and Passive Electronic Components

fig4

Figure 4

Figure 4: Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs 