Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

Table 2

Parameter(s) value(s) of the respective standard electron mobility models. Changed value(s) correspond to a nonphysical behavior of the simulated transfer characteristics (i.e., null transconductance).

Electron mobility model	Beta (=1)	Intel 1		Intel 2		Lombardi (cgs units)
Parameter(s)	Prefactor	(MV/m)		(MV/m)		(10^7)	(10^5)		(10^14)
Default value(s)	1	4.2	0.5	57.1	1.02	4.75	1.74	0.125	5.82
Changed value(s)	0.042	4.5	1	4.0	1	4.75	1.74	0.125	0.01