Review Article
A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation
Table 1
ITRS roadmap 2013 for STT-MRAM technology requirements.
| | Year of production | 2013 | 2014 | 2015 | 2016 | 2017 | 2018 | 2019 | 2020 |
| | Technology node (nm) | 90 | 90 | 65 | 65 | 45 | 45 | 45 | 32 | | Cell size area factor a in multiples of | 28 | 28 | 20 | 20 | 15 | 14 | 14 | 10 | | Typical cell size (μm2) | 0.23 | 0.23 | 0.08 | 0.08 | 0.030 | 0.028 | 0.028 | 0.010 | | Material technology | IMA | IMA | IMA | IMA | PMA | PMA | PMA | PMA | | Switching current (A) | 340 | 310 | 200 | 175 | 120 | 120 | 100 | 50 | | Write energy (pJ/bit) | 4.3 | 3.9 | 2.5 | 2.5 | 1.2 | 1.2 | 1 | 0.3 | | Active area per cell (μm2) | 0.021 | 0.019 | 0.01 | 0.008 | 0.006 | 0.006 | 0.005 | 0.004 | | RA product (Ohm-μm2) | 13.5 | 13.5 | 12.5 | 11 | 10 | 10 | 10 | 10 | | MR ratio (%) | 120 | 120 | 120 | 120 | 150 | 150 | 150 | 150 | | Nonvolatile data retention (years) | >10 | >10 | >10 | >10 | >10 | >10 | >10 | >10 | | Write endurance (read/write cycles) | >1 | >1 | >1 | >1 | >1 | >1 | >1 | >1 | | Endurance (years at bias) | >10 | >10 | >10 | >10 | >10 | >10 | >10 | >10 |
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