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Active and Passive Electronic Components
Volume 2016, Article ID 6068171, 8 pages
http://dx.doi.org/10.1155/2016/6068171
Research Article

Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

ORDIST, Grad. School of Sci. & Eng., Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

Received 24 September 2016; Revised 13 November 2016; Accepted 16 November 2016

Academic Editor: Mingxiang Wang

Copyright © 2016 Yasuhisa Omura. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yasuhisa Omura, “Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET,” Active and Passive Electronic Components, vol. 2016, Article ID 6068171, 8 pages, 2016. https://doi.org/10.1155/2016/6068171.