Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

Figure 3

dependence on fin width or SOI layer thickness of Si SOI MOSFET device. The devices shown in [6] are two-dimensionally confined with (001) and (011) surfaces. It is assumed that the gate oxide layer is 3 nm thick, the body silicon layer is 7 nm thick for [6], and = 0.5 eV⁻¹. The devices shown in [7] are two-dimensionally confined with (001) surface. It is assumed that the gate oxide layer is 50 nm thick, the body silicon layer is ranging from 3 nm to 6 nm thick for [7], and α = 0.5 eV⁻¹. It is also assumed that = 0.916 for (001) Si surface and = 0.314 for (011) Si surface.