Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

<div>Measured (symbols) and simulated (lines) real part of optimal source impedance versus <svg height="11.9316pt" id="M29" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 19.4023 11.9316" width="19.4023pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.332,3.132)"><path d="M618 181C565 77 513 26 413 26C264 26 151 150 151 336C151 486 240 625 407 625C516 625 573 582 600 475L634 483C627 540 622 581 613 638C585 643 518 665 435 665C211 665 46 526 46 315C46 158 157 -15 406 -15C480 -15 564 4 594 12C612 43 638 121 651 168L618 181Z" id="g58-65"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="673" vert-adv-y="673"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,13.456,3.132)"><path d="M522 166C507 123 488 90 472 71C449 44 419 38 347 38C296 38 261 38 242 51C223 63 217 85 217 132V315H311C398 315 406 310 419 239H453V433H419C406 365 401 358 311 358H217V580C217 609 219 612 251 612H331C400 612 427 604 440 584C453 561 463 541 472 498L506 502C501 558 497 627 497 650H43V618C122 610 130 609 130 520V128C130 46 121 40 30 32V0H521C529 30 552 128 557 162L522 166Z" id="g58-67"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="580" vert-adv-y="580"></glyph.data></g></svg> for different emitter widths. <svg height="11.8174pt" id="M30" style="vertical-align:-3.1815pt" version="1.1" viewbox="-0.0498162 -8.6359 18.6898 11.8174" width="18.6898pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.332,3.132)"><path d="M384 354C435 370 515 408 515 502C515 549 494 593 459 616C426 639 384 650 308 650H45V618C127 613 130 606 130 524V127C130 45 125 38 37 33V0H262C342 0 409 12 461 40C521 73 558 124 558 192C558 295 481 336 384 352V354ZM217 365V556C217 587 221 597 229 604C238 611 261 615 288 615C382 615 421 558 421 490C421 406 374 365 266 365H217ZM217 327H264C384 327 457 284 457 183C457 80 383 38 301 38C235 38 217 55 217 127V327Z" id="g58-64"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="598" vert-adv-y="598"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,12.746,3.132)"><path d="M522 166C507 123 488 90 472 71C449 44 419 38 347 38C296 38 261 38 242 51C223 63 217 85 217 132V315H311C398 315 406 310 419 239H453V433H419C406 365 401 358 311 358H217V580C217 609 219 612 251 612H331C400 612 427 604 440 584C453 561 463 541 472 498L506 502C501 558 497 627 497 650H43V618C122 610 130 609 130 520V128C130 46 121 40 30 32V0H521C529 30 552 128 557 162L522 166Z" id="g58-67"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="580" vert-adv-y="580"></glyph.data></g></svg> is at 1.1 V. The operating frequency is at 2 GHz. The emitter length is fixed as 10.2 <i>μ</i>m. Solid and dash lines depict the results obtained from the noise model with and without considering the breakdown network, respectively. In the inset, the results for different emitter lengths as the emitter width is fixed as 0.6 <i>μ</i>m are shown.</div>

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Figure 3

Figure 3: Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region 