A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Figure 10

Application of the thermal model for SiC MOSFETs of one technology but different voltage classes 1200 V/20 A (gen. 2) @ = 20 V, = 800 V, = 25°C, and = 60 nH; 900 V/20 A (gen. 3) @ = 15 V, = 400 V, = 25°C, and = 60 nH; 1700 V/50 A (gen. 2) @ = 20 V, = 1000 V, = 25°C, and = 60 nH.