A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Figure 15

(a) Increase of gate-current leakage of a 650 V/20 A SiC MOSFET shortly before turn-off at 18 μs, (b) partial breakthrough of the gate oxide, and (c) operation with degraded gate oxide @ = 400 V; = 18 V; = 25°C; = 60 nH.

(a)

(b)

(c)