A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Figure 4

(a) Structure of the cross section: a planar vertical SiC MOSFET chip with its 1D-equivalent thermal model. A picture of device destroyed by a hard switching fault (b) and a new device in a TO-247 package (c). The cross section of a TO-247 package (d) with the chip and its connections.

(a)

(b)

(c)

(d)