A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Figure 8

Depth of short-circuit energy penetration of a ten-layer thermal transmission-line model (a) at = 800 V and (b) = 400 V @ = 20 V; = 25°C; = 60 nH; note that time-base is different.

(a)

(b)