Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

Figure 3

The temperature dependence of (a) the depletion region width and (b) the barrier height of the Au/BN/C device. (c) The energy band diagram of the device. In the diagram , , , , , , and are the metal work function, electron affinity, barrier height, conduction band energy level, valence band energy level, the Fermi level of BN, and the energy band gap, respectively.

(a)

(b)

(c)