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Active and Passive Electronic Components
Volume 2017, Article ID 5375619, 9 pages
Research Article

Low-Power CMOS Integrated Hall Switch Sensor

College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian, China

Correspondence should be addressed to Rongshan Wei; nc.ude.uzf@80srw

Received 24 July 2017; Accepted 28 September 2017; Published 7 November 2017

Academic Editor: Ching Liang Dai

Copyright © 2017 Rongshan Wei et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents an integrated Hall switch sensor based on SMIC 0.18 µm CMOS technology. The system includes a front-end Hall element and a back-end signal processing circuit. By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the offset voltage can be suppressed effectively. The simulation results showed that the Hall switch can eliminate offset voltage greater than 1 mV at 3.3 V supply voltage. Two modes of the Hall switch circuit, the awake mode and the sleep mode, were realized by using clock logic signals without compromising the performance of the Hall switch, thereby reducing power consumption. The test results showed that the operate point and the release point of the switch were within the range of 3–7 mT at 3.3 V supply voltage. Meanwhile, the current consumption is 7.89 µA.