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Active and Passive Electronic Components
Volume 2017, Article ID 5947819, 8 pages
https://doi.org/10.1155/2017/5947819
Research Article

Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

1Department of Electronic and Communication Engineering, Guru Nanak Dev Engineering College, Ludhiana 141006, India
2Semi-Conductor Laboratory, Department of Space, Government of India, Mohali 160071, India

Correspondence should be addressed to Navneet Kaur; ni.ca.cedng@ruakteenvan

Received 30 July 2016; Revised 31 October 2016; Accepted 17 November 2016; Published 21 March 2017

Academic Editor: Mingxiang Wang

Copyright © 2017 Satyam Shukla et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Satyam Shukla, Sandeep Singh Gill, Navneet Kaur, H. S. Jatana, and Varun Nehru, “Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET,” Active and Passive Electronic Components, vol. 2017, Article ID 5947819, 8 pages, 2017. https://doi.org/10.1155/2017/5947819.