Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

<div>Variation of output parameters of FinFET with respect to different doping concentration for <svg height="12.2578pt" id="M81" style="vertical-align:-3.29568pt" version="1.1" viewbox="-0.0498162 -8.96212 16.7886 12.2578" width="16.7886pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M620 675H597C578 656 570 650 541 650H144C112 650 104 653 94 675H72C59 618 42 552 23 493L53 491C71 534 88 564 105 585C124 608 144 615 238 615H290L197 121C182 40 174 34 88 28L82 0H361L367 28C275 34 266 38 281 121L374 615H441C522 615 543 608 553 583C562 560 566 531 565 493L597 494C603 551 612 629 620 675Z" id="g113-85"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="637" vert-adv-y="637"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.176,3.132)"><path d="M262 451C169 451 38 375 38 210C38 98 121 -12 261 -12C360 -12 481 64 481 227C481 351 386 451 262 451ZM249 414C337 414 385 320 385 204C385 70 333 25 272 25C189 25 134 117 134 241C134 355 189 414 249 414Z" id="g58-109"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="519" vert-adv-y="519"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,11.744,3.132)"><path d="M482 0V30C420 38 407 48 370 103L273 248C308 299 331 332 352 357C387 397 401 404 463 409V439H277V409C318 405 324 400 307 369C290 337 270 307 251 279L194 367C175 396 180 402 220 409V439H18V409C74 401 87 395 117 349L204 213C173 168 147 130 119 95C78 46 67 38 5 30V0H195V30C144 38 143 47 162 79C181 112 202 149 225 181L297 70C314 43 307 35 264 30V0H482Z" id="g58-118"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="481" vert-adv-y="481"></glyph.data></g></svg> = 0.5 nm and 1 nm and <svg height="11.8174pt" id="M82" style="vertical-align:-3.1815pt" version="1.1" viewbox="-0.0498162 -8.6359 20.7946 11.8174" width="20.7946pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M828 650H570L564 622C646 614 650 609 634 524L604 366H253L281 524C296 608 308 615 382 622L388 650H132L126 622C211 615 214 609 198 524L121 122C106 42 102 35 23 28L17 0H276L282 28C196 35 191 40 206 122L243 324H597L559 123C544 42 537 35 452 28L446 0H710L716 28C632 35 628 43 643 122L719 524C735 610 741 615 822 622L828 650Z" id="g113-73"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="840" vert-adv-y="840"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,10.075,3.132)"><path d="M529 0V30C463 35 457 42 457 102V452C402 441 350 439 267 439H185V467C185 548 199 596 218 621C229 641 250 658 281 658C328 658 363 626 386 599C393 590 403 590 416 598C425 605 434 615 439 624C445 637 443 650 434 662C424 677 387 707 325 710C286 706 240 688 199 655C144 611 123 560 116 535C109 512 104 489 104 460V439H55L27 408L32 396H104V102C104 41 97 38 33 30V0H256V30C192 35 185 42 185 102V396H324C373 396 376 388 376 344V102C376 42 369 35 313 30V0H529Z" id="g58-27"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="547" vert-adv-y="547"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,15.053,3.132)"><path d="M532 0V30C473 38 467 38 467 107V298C467 395 416 451 336 451C307 451 279 439 251 420C226 404 205 389 185 374V453C142 434 94 422 43 413V386C98 378 104 373 104 309V107C104 41 100 38 31 30V0H251V30C191 35 185 40 185 107V337C216 364 255 389 295 389C360 389 386 347 386 276V110C386 44 380 35 321 30V0H532Z" id="g58-108"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="557" vert-adv-y="557"></glyph.data></g></svg> = 15 nm. (a) On current. (b) On-off current ratio. (c) SS. (d) DIBL.</div>

Active and Passive Electronic Components

fig9

Figure 9

Figure 9: Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET 