Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

Table 1

Geometry of designed FinFET.

SN	FinFET parameters	Value
	Top fin width (nm)	1
	Bottom fin width (nm)	15
	Oxide thickness (nm)	1
	Fin height (nm)	10 to 40
	Doping concentration (/cm^3)	10^15 to 10^18