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Active and Passive Electronic Components
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Active and Passive Electronic Components
/
2017
/
Article
/
Tab 2
/
Research Article
Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET
Table 2
Variation of
and
with
.
SN
(nm)
(nm)
(
A)
10
30.042
0.1502083
15
40.042
0.2002083
20
50.042
0.2502083
30
70.042
0.3502083
40
90.042
0.4502083