Power Device Thermal Fault Tolerant Control of High-Power Three-Level Explosion-Proof Inverter Based on Holographic Equivalent Dual-Mode Modulation

Figure 13

Surface and the substrate temperature rises of IGBT based on holographic equivalent dual mode. (a) Surface temperature rise of IGBT based on simplified SVPWM; (b) surface temperature rise of IGBT based on quasi-square-wave modulation; (c) substrate temperature rise of IGBT based on simplified SVPWM; (d) substrate temperature rise of IGBT based on quasi-square-wave modulation.

(a)

(b)

(c)

(d)