Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics

<div><svg height="11.8174pt" id="M25" style="vertical-align:-3.1815pt" version="1.1" viewbox="-0.0498162 -8.6359 12.3951 11.8174" width="12.3951pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M405 650H141L135 622C222 616 230 610 215 535L133 116C118 41 113 33 29 28L23 0H289L295 28C209 33 205 40 219 116L298 535C312 609 317 616 399 622L405 650Z" id="g113-74"></path></g><g transform="matrix(.0091,0,0,-0.0091,4.719,3.132)"><path d="M786 370C786 572 637 650 431 650H137L130 618C217 606 220 603 204 519L129 127C115 48 107 39 26 30L18 0H270C410 0 516 20 609 75C722 140 786 240 786 370ZM683 373C683 178 547 40 323 40C298 40 264 40 241 45C213 51 207 64 220 127L295 545C304 582 309 595 320 601C335 610 367 613 406 613C570 613 683 538 683 373Z" id="g50-69"></path></g></svg>-<svg height="11.927pt" id="M26" style="vertical-align:-3.291101pt" version="1.1" viewbox="-0.0498162 -8.6359 14.2872 11.927" width="14.2872pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g><g transform="matrix(.0091,0,0,-0.0091,7.332,3.132)"><path d="M722 297H451L442 267C561 257 561 253 547 182L531 98C521 44 465 24 390 24C228 24 130 134 130 296C130 482 252 628 465 628C592 628 657 579 656 458L692 461C695 540 699 605 702 631C664 642 590 667 492 667C203 667 24 502 24 285C24 93 170 -17 368 -17C464 -17 543 11 617 28C613 43 612 68 620 106L635 182C649 255 652 258 716 268L722 297Z" id="g50-72"></path></g></svg> characteristics of Si VDMOS with different gate dielectrics and different oxidation conditions before and after TID irradiation with <svg height="11.927pt" id="M27" style="vertical-align:-3.291101pt" version="1.1" viewbox="-0.0498162 -8.6359 14.2872 11.927" width="14.2872pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g><g transform="matrix(.0091,0,0,-0.0091,7.332,3.132)"><path d="M722 297H451L442 267C561 257 561 253 547 182L531 98C521 44 465 24 390 24C228 24 130 134 130 296C130 482 252 628 465 628C592 628 657 579 656 458L692 461C695 540 699 605 702 631C664 642 590 667 492 667C203 667 24 502 24 285C24 93 170 -17 368 -17C464 -17 543 11 617 28C613 43 612 68 620 106L635 182C649 255 652 258 716 268L722 297Z" id="g50-72"></path></g></svg> = 10 V (solid: before TID; open: after TID).</div>

Active and Passive Electronic Components

fig1

Figure 1

Figure 1: Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics 

Active and Passive Electronic Components

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Figure 1

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics