Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics

<div><svg height="9.39034pt" id="M34" style="vertical-align:-3.42943pt" version="1.1" viewbox="-0.0498162 -5.96091 15.0492 9.39034" width="15.0492pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M546 430L539 434C529 434 505 438 495 440C473 444 450 448 430 448C352 448 265 412 213 366C145 306 96 203 96 103C96 22 135 -12 160 -12C190 -12 238 14 262 32C310 68 368 120 411 184H413C403 117 396 75 384 21C353 -118 325 -158 291 -184C270 -200 241 -205 208 -205C133 -205 90 -164 74 -110C70 -98 58 -100 49 -107C34 -119 23 -140 23 -155C23 -190 74 -261 166 -261C219 -261 280 -233 314 -208C383 -157 446 -79 470 81C491 223 529 388 546 430ZM456 386C452 357 433 283 420 252C402 216 366 174 325 129C288 88 239 56 212 56C192 56 182 77 182 120C182 165 199 242 226 292C256 348 281 377 311 389C327 395 353 402 375 402C408 402 436 394 456 386Z" id="g113-104"></path></g><g transform="matrix(.0091,0,0,-0.0091,7.072,3.132)"><path d="M781 91L765 118C733 86 702 70 693 70C686 70 685 77 692 106L738 297C772 439 736 451 712 451S675 445 647 431C605 410 526 356 452 257H450L459 294C491 426 459 451 429 451C403 451 386 445 361 431C312 404 239 343 170 253H168L188 333C208 411 205 451 175 451C148 451 85 417 24 346L39 318C57 338 100 374 112 374C120 374 122 372 115 339C91 226 62 112 28 -6L37 -12C59 -4 87 3 114 6C125 68 142 127 154 168C184 227 316 383 372 383C397 383 396 366 381 289C362 192 338 92 312 -6L317 -12C339 -5 367 3 396 6L434 170C468 234 598 383 650 383C668 383 676 369 664 319L609 90C593 23 600 -12 629 -12C654 -12 722 23 781 91Z" id="g50-110"></path></g></svg>-<svg height="11.927pt" id="M35" style="vertical-align:-3.291101pt" version="1.1" viewbox="-0.0498162 -8.6359 14.2872 11.927" width="14.2872pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g><g transform="matrix(.0091,0,0,-0.0091,7.332,3.132)"><path d="M722 297H451L442 267C561 257 561 253 547 182L531 98C521 44 465 24 390 24C228 24 130 134 130 296C130 482 252 628 465 628C592 628 657 579 656 458L692 461C695 540 699 605 702 631C664 642 590 667 492 667C203 667 24 502 24 285C24 93 170 -17 368 -17C464 -17 543 11 617 28C613 43 612 68 620 106L635 182C649 255 652 258 716 268L722 297Z" id="g50-72"></path></g></svg> characteristics of Si VDMOS with different gate dielectrics and different oxidation conditions before and after TID irradiation with <svg height="11.927pt" id="M36" style="vertical-align:-3.291101pt" version="1.1" viewbox="-0.0498162 -8.6359 14.2872 11.927" width="14.2872pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g><g transform="matrix(.0091,0,0,-0.0091,7.332,3.132)"><path d="M722 297H451L442 267C561 257 561 253 547 182L531 98C521 44 465 24 390 24C228 24 130 134 130 296C130 482 252 628 465 628C592 628 657 579 656 458L692 461C695 540 699 605 702 631C664 642 590 667 492 667C203 667 24 502 24 285C24 93 170 -17 368 -17C464 -17 543 11 617 28C613 43 612 68 620 106L635 182C649 255 652 258 716 268L722 297Z" id="g50-72"></path></g></svg> = 10 V (solid line: before irradiation; dashed line: after TID irradiation).</div>

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fig2

Figure 2

Figure 2: Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics 

Active and Passive Electronic Components

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Figure 2

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics