Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics

<div>(a) <svg height="11.8174pt" id="M52" style="vertical-align:-3.1815pt" version="1.1" viewbox="-0.0498162 -8.6359 29.1549 11.8174" width="29.1549pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M600 0V24L339 665L311 657L43 24V0H600ZM497 50H107L303 539L497 50Z" id="g113-133"></path></g><g transform="matrix(.013,0,0,-0.013,8.327,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g><g transform="matrix(.0091,0,0,-0.0091,15.659,3.132)"><path d="M601 496C596 555 591 627 591 675H567C551 656 544 650 516 650H120C91 650 79 651 64 675H41C38 619 34 555 29 492H63C75 537 83 566 96 582C110 604 128 612 207 612H272V126C272 46 264 38 170 33V0H464V33C368 38 359 48 359 126V612H430C502 612 520 605 535 582C547 566 556 541 567 492L601 496Z" id="g58-82"></path></g><g transform="matrix(.0091,0,0,-0.0091,21.374,3.132)"><path d="M738 650H471V617C551 612 559 606 559 524V368H218V524C218 606 227 612 305 617V650H38V617C123 612 131 606 131 524V126C131 44 124 38 41 33V0H310V33C226 38 218 44 218 126V321H559V126C559 44 551 38 463 33V0H737V33C654 38 646 44 646 126V524C646 606 654 612 738 617V650Z" id="g58-70"></path></g></svg> of Si VDMOS with different gate dielectrics after different TID bias irradiation; (b) <svg height="11.9316pt" id="M53" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 23.8114 11.9316" width="23.8114pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M600 0V24L339 665L311 657L43 24V0H600ZM497 50H107L303 539L497 50Z" id="g113-133"></path></g><g transform="matrix(.013,0,0,-0.013,8.327,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g><g transform="matrix(.0091,0,0,-0.0091,15.659,3.132)"><path d="M262 451C169 451 38 375 38 210C38 98 121 -12 261 -12C360 -12 481 64 481 227C481 351 386 451 262 451ZM249 414C337 414 385 320 385 204C385 70 333 25 272 25C189 25 134 117 134 241C134 355 189 414 249 414Z" id="g58-109"></path></g><g transform="matrix(.0091,0,0,-0.0091,20.281,3.132)"><path d="M303 37L293 66C280 59 256 49 231 49S173 63 173 143V396H281C294 404 298 428 287 439H173V575L158 577L92 509V439H46L17 408L22 396H92V107C92 27 128 -12 192 -12C203 -12 218 -9 237 2L303 37Z" id="g58-114"></path></g></svg> and <svg height="11.9316pt" id="M54" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 23.4657 11.9316" width="23.4657pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M600 0V24L339 665L311 657L43 24V0H600ZM497 50H107L303 539L497 50Z" id="g113-133"></path></g><g transform="matrix(.013,0,0,-0.013,8.327,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g><g transform="matrix(.0091,0,0,-0.0091,17.616,3.132)"><path d="M138 535C169 535 191 560 191 589C191 620 168 644 139 644S85 620 85 589C85 560 110 535 138 535ZM257 0V30C192 35 185 43 185 109V453C142 435 94 422 40 414V386C101 378 104 372 104 311V109C104 41 97 35 33 30V0H257Z" id="g58-103"></path></g><g transform="matrix(.0091,0,0,-0.0091,20.009,3.132)"><path d="M303 37L293 66C280 59 256 49 231 49S173 63 173 143V396H281C294 404 298 428 287 439H173V575L158 577L92 509V439H46L17 408L22 396H92V107C92 27 128 -12 192 -12C203 -12 218 -9 237 2L303 37Z" id="g58-114"></path></g></svg> characteristics of Si VDMOS with both single SiO<sub>2</sub> and double Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> gate dielectrics after different TID bias irradiation.</div>

Active and Passive Electronic Components

fig3

Figure 3

Figure 3: Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics 

Active and Passive Electronic Components

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Figure 3

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics