Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics

<div>(a) <svg height="11.9316pt" id="M103" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 26.5517 11.9316" width="26.5517pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M600 0V24L339 665L311 657L43 24V0H600ZM497 50H107L303 539L497 50Z" id="g113-133"></path></g><g transform="matrix(.013,0,0,-0.013,8.327,0)"><path d="M822 650H589L583 622C660 617 677 607 674 561C672 534 664 481 647 390L600 137H596L273 650H126L120 622C176 620 194 615 207 594C221 571 225 557 214 504L161 257C141 166 129 112 121 85C108 42 83 30 29 28L23 0H260L266 28C193 33 173 42 176 89C178 122 186 172 202 255L256 527H259L583 -8H612L690 390C708 481 720 535 728 558C744 603 756 619 816 622L822 650Z" id="g113-79"></path></g><g transform="matrix(.0091,0,0,-0.0091,18.389,3.132)"><path d="M262 451C169 451 38 375 38 210C38 98 121 -12 261 -12C360 -12 481 64 481 227C481 351 386 451 262 451ZM249 414C337 414 385 320 385 204C385 70 333 25 272 25C189 25 134 117 134 241C134 355 189 414 249 414Z" id="g58-109"></path></g><g transform="matrix(.0091,0,0,-0.0091,23.011,3.132)"><path d="M303 37L293 66C280 59 256 49 231 49S173 63 173 143V396H281C294 404 298 428 287 439H173V575L158 577L92 509V439H46L17 408L22 396H92V107C92 27 128 -12 192 -12C203 -12 218 -9 237 2L303 37Z" id="g58-114"></path></g></svg> and (b) <svg height="11.9316pt" id="M104" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 24.3138 11.9316" width="24.3138pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M600 0V24L339 665L311 657L43 24V0H600ZM497 50H107L303 539L497 50Z" id="g113-133"></path></g><g transform="matrix(.013,0,0,-0.013,8.327,0)"><path d="M822 650H589L583 622C660 617 677 607 674 561C672 534 664 481 647 390L600 137H596L273 650H126L120 622C176 620 194 615 207 594C221 571 225 557 214 504L161 257C141 166 129 112 121 85C108 42 83 30 29 28L23 0H260L266 28C193 33 173 42 176 89C178 122 186 172 202 255L256 527H259L583 -8H612L690 390C708 481 720 535 728 558C744 603 756 619 816 622L822 650Z" id="g113-79"></path></g><g transform="matrix(.0091,0,0,-0.0091,18.389,3.132)"><path d="M138 535C169 535 191 560 191 589C191 620 168 644 139 644S85 620 85 589C85 560 110 535 138 535ZM257 0V30C192 35 185 43 185 109V453C142 435 94 422 40 414V386C101 378 104 372 104 311V109C104 41 97 35 33 30V0H257Z" id="g58-103"></path></g><g transform="matrix(.0091,0,0,-0.0091,20.782,3.132)"><path d="M303 37L293 66C280 59 256 49 231 49S173 63 173 143V396H281C294 404 298 428 287 439H173V575L158 577L92 509V439H46L17 408L22 396H92V107C92 27 128 -12 192 -12C203 -12 218 -9 237 2L303 37Z" id="g58-114"></path></g></svg> characteristics of Si VDMOS with both single SiO<sub>2</sub> and double Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> gate dielectrics after different TID bias irradiation.</div>

Active and Passive Electronic Components

fig4

Figure 4

Figure 4: Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Gate Dielectrics 

Active and Passive Electronic Components

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Figure 4

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO₂ and Si₃N₄/SiO₂ Gate Dielectrics